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Why do power diodes have a p+ n- n+ construction and why not p+ p- n+?
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I've been learning about power diodes and how they differ from low power diodes with the addition of a lightly doped n-type layer.
This n-type layer improves the breakdown voltage rating of the device, and improves conduction in forward bias due to the high number of injected carriers from the heavily dopes regions.
Will a power diode work the same if this n- layer is replaced with a lightly doped p-type layer? If it does, why is an n- layer preferred? Or, if it doesn't, why?
diodes power-electronics semiconductors
asked 3 hours ago
Siddharth Nandhan
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up vote
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down vote
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I've been learning about power diodes and how they differ from low power diodes with the addition of a lightly doped n-type layer.
This n-type layer improves the breakdown voltage rating of the device, and improves conduction in forward bias due to the high number of injected carriers from the heavily dopes regions.
Will a power diode work the same if this n- layer is replaced with a lightly doped p-type layer? If it does, why is an n- layer preferred? Or, if it doesn't, why?
diodes power-electronics semiconductors
asked 3 hours ago
Siddharth Nandhan
212
New contributor
Siddharth Nandhan is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
add a comment |Â
up vote
4
down vote
favorite
up vote
4
down vote
favorite
I've been learning about power diodes and how they differ from low power diodes with the addition of a lightly doped n-type layer.
This n-type layer improves the breakdown voltage rating of the device, and improves conduction in forward bias due to the high number of injected carriers from the heavily dopes regions.
Will a power diode work the same if this n- layer is replaced with a lightly doped p-type layer? If it does, why is an n- layer preferred? Or, if it doesn't, why?
diodes power-electronics semiconductors
asked 3 hours ago
Siddharth Nandhan
212
New contributor
Siddharth Nandhan is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
I've been learning about power diodes and how they differ from low power diodes with the addition of a lightly doped n-type layer.
This n-type layer improves the breakdown voltage rating of the device, and improves conduction in forward bias due to the high number of injected carriers from the heavily dopes regions.
Will a power diode work the same if this n- layer is replaced with a lightly doped p-type layer? If it does, why is an n- layer preferred? Or, if it doesn't, why?
diodes power-electronics semiconductors
diodes power-electronics semiconductors
asked 3 hours ago
Siddharth Nandhan
212
New contributor
Siddharth Nandhan is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
asked 3 hours ago
Siddharth Nandhan
212
New contributor
Siddharth Nandhan is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
asked 3 hours ago
Siddharth Nandhan
212
New contributor
Siddharth Nandhan is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
asked 3 hours ago
Siddharth Nandhan
212
asked 3 hours ago
Siddharth Nandhan
212
212
New contributor
Siddharth Nandhan is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
New contributor
Siddharth Nandhan is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
Siddharth Nandhan is a new contributor to this site. Take care in asking for clarification, commenting, and answering.
Check out our Code of Conduct.
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1 Answer
1
active
oldest
votes
up vote
4
down vote
Electron mobility is approximately twice that of hole mobility, so using the electrons as majority carriers means you get:
For fixed size, twice the performance or...
For fixed performance, half the size.
answered 3 hours ago
DrFriedParts
11.3k2551
+1 Used to be almost three times hole mobility in silicon (not germanium), when I was studying this in 1980. I remember the old figures of 1300 vs 500 for silicon and 3800 vs 1800 for germanium. But measurements may have been refined since the olden days, I suppose. (Room temp of $300:textK$.)
– jonk
50 mins ago
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1 Answer
1
active
oldest
votes
1 Answer
1
active
oldest
votes
active
oldest
votes
active
oldest
votes
up vote
4
down vote
Electron mobility is approximately twice that of hole mobility, so using the electrons as majority carriers means you get:
For fixed size, twice the performance or...
For fixed performance, half the size.
answered 3 hours ago
DrFriedParts
11.3k2551
+1 Used to be almost three times hole mobility in silicon (not germanium), when I was studying this in 1980. I remember the old figures of 1300 vs 500 for silicon and 3800 vs 1800 for germanium. But measurements may have been refined since the olden days, I suppose. (Room temp of $300:textK$.)
– jonk
50 mins ago
add a comment |Â
up vote
4
down vote
Electron mobility is approximately twice that of hole mobility, so using the electrons as majority carriers means you get:
For fixed size, twice the performance or...
For fixed performance, half the size.
answered 3 hours ago
DrFriedParts
11.3k2551
+1 Used to be almost three times hole mobility in silicon (not germanium), when I was studying this in 1980. I remember the old figures of 1300 vs 500 for silicon and 3800 vs 1800 for germanium. But measurements may have been refined since the olden days, I suppose. (Room temp of $300:textK$.)
– jonk
50 mins ago
add a comment |Â
up vote
4
down vote
up vote
4
down vote
Electron mobility is approximately twice that of hole mobility, so using the electrons as majority carriers means you get:
For fixed size, twice the performance or...
For fixed performance, half the size.
answered 3 hours ago
DrFriedParts
11.3k2551
Electron mobility is approximately twice that of hole mobility, so using the electrons as majority carriers means you get:
For fixed size, twice the performance or...
For fixed performance, half the size.
answered 3 hours ago
DrFriedParts
11.3k2551
answered 3 hours ago
DrFriedParts
11.3k2551
answered 3 hours ago
DrFriedParts
11.3k2551
answered 3 hours ago
DrFriedParts
11.3k2551
11.3k2551
+1 Used to be almost three times hole mobility in silicon (not germanium), when I was studying this in 1980. I remember the old figures of 1300 vs 500 for silicon and 3800 vs 1800 for germanium. But measurements may have been refined since the olden days, I suppose. (Room temp of $300:textK$.)
– jonk
50 mins ago
add a comment |Â
+1 Used to be almost three times hole mobility in silicon (not germanium), when I was studying this in 1980. I remember the old figures of 1300 vs 500 for silicon and 3800 vs 1800 for germanium. But measurements may have been refined since the olden days, I suppose. (Room temp of $300:textK$.)
– jonk
50 mins ago
+1 Used to be almost three times hole mobility in silicon (not germanium), when I was studying this in 1980. I remember the old figures of 1300 vs 500 for silicon and 3800 vs 1800 for germanium. But measurements may have been refined since the olden days, I suppose. (Room temp of $300:textK$.)
– jonk
50 mins ago
+1 Used to be almost three times hole mobility in silicon (not germanium), when I was studying this in 1980. I remember the old figures of 1300 vs 500 for silicon and 3800 vs 1800 for germanium. But measurements may have been refined since the olden days, I suppose. (Room temp of $300:textK$.)
– jonk
50 mins ago
add a comment |Â
Siddharth Nandhan is a new contributor. Be nice, and check out our Code of Conduct.
Siddharth Nandhan is a new contributor. Be nice, and check out our Code of Conduct.
Siddharth Nandhan is a new contributor. Be nice, and check out our Code of Conduct.
Siddharth Nandhan is a new contributor. Be nice, and check out our Code of Conduct.
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